氮化铝高性能材料项目成功落户鄂尔多斯（北京）高新科创园

9月23日，北京高创恒兴科技有限公司与北京闪瓷科技有限公司正式签署项目合作协议，标志着氮化铝高性能材料项目成功落户鄂尔多斯（北京）高新科创园。

      On September 23, Beijing Gaochuang Hengxing Technology Co., Ltd. and Beijing Shanci Technology Co., Ltd. officially signed a project cooperation agreement, marking the successful establishment of the aluminum nitride high-performance materials project in Ordos (Beijing) High-tech Innovation Park.

北京闪瓷科技有限公司依托国内首创的“气泡法制备高纯纳米氮化铝粉体技术”，成功突破绝缘导热材料的关键瓶颈。该技术将传统多设备、超24小时的生产流程集成于单台“闪瓷炉”，实现秒级反应，使氮化铝纯度从2N提升至5N，粒径细化至纳米级，成本降低约85%。目前，该技术已应用于新能源、AI超算、低空经济等领域，凭借氮化铝的高导热与高绝缘特性，有效提升电子设备散热能力与系统可靠性，为高功率芯片、先进计算模组及轻量化飞行器提供关键材料。

        Beijing Shanci Technology Co., Ltd. has successfully overcome the critical bottleneck of insulating thermal conductive materials relying on the domestically pioneering "bubble method for preparing high-purity aluminum nitride powder" technology. This technology integrates the traditional multi-device, over 24-hour production process into a single "shanci furnace", achieving a reaction time of seconds, which elevates the purity of aluminum nitride from 2N to 5N, while refining the particle size to the nanoscale and reducing costs by approximately 85%. Currently, this technology has been applied in fields such as new energy, AI supercomputing, and the low-altitude economy. Leveraging the high thermal conductivity and high insulation properties of aluminum nitride, it effectively enhances the heat dissipation ability and system reliability of electronic devices, providing key materials for high-power chips, advanced computing modules, and lightweight aircraft.

本次与鄂尔多斯（北京）高新科创园合作以 “研发在京、转化在鄂” 为原则，计划一期在高新区建设100 吨示范线，逐步实现研发、中试与生产一体化布局，填补氮化铝半导体产业链 5N 级以上原材料瓶颈，提升区域产业链完整性。科创园将为项目提供全方位服务，进一步完善高新区新材料产业领域建设，填补高新区在氮化铝领域的产业空白，赋能产业“延链强链补链”。

       This collaboration with the Ordos (Beijing) High-Tech Innovation Park is based on the principle of 'R&D in Beijing and transformation in Ordos.' The plan is to build a 100-ton demonstration line in the high-tech zone in the first phase, gradually achieving an integrated layout of R&D, pilot testing, and production, filling the bottleneck of 5N grade and above raw materials in the aluminum nitride semiconductor industry chain, and enhancing the completeness of the regional industrial chain. The innovation park will provide comprehensive services for the project, further improve the construction of the new materials industry in the high-tech zone, fill the industrial gap in the aluminum nitride sector in the high-tech zone, and empower the industry to 'extend, strengthen, and supplement the chain.'